19

2022

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09

Nano material resistance may come out soon

Category:


【Summary】Recently, the research team of Academician Xie Yi of the University of Science and Technology of the People's Republic of China, the special professor Wu Changzheng, and the research team of Professor Zeng Xiaocheng and the strong magnetic field center of the Chinese Academy of Sciences have cooperated to achieve the highest negative magnetoresistance effect in two-dimensional nanomaterials through anionic solid solution technology

Recently, the research team of Xie Yi, academician of the Chinese University of Science and Technology, and the special professor Wu Changzheng, together with Professor Zeng Xiaocheng and the research team of the strong magnetic field center of the Chinese Academy of Sciences, realized the highest negative magnetoresistance effect in two-dimensional nanomaterials through anionic solid solution technology. The discovery of this phenomenon may promote the progress of two-dimensional materials in the field of spintronic devices. The results were published in the latest issue of the top journal of physics, Physical Review Express. The discovery of this phenomenon breaks through the existing framework of resistance materials and has subversive significance for the refinement of resistors.


The so-called giant magnetoresistance effect refers to the phenomenon that the resistivity of magnetic materials changes greatly when there is an external magnetic field compared with when there is no external magnetic field. Giant magnetoresistance materials based on the control of the degree of freedom of electronic spin can realize the high-density storage and high-speed reading and writing of information, which is the core of the entire information industry. With the increasing demand for high integration and miniaturization of electronic devices, the realization of magnetoresistance effect at a smaller material scale has become a pursuit goal. The two-dimensional nano-materials represented by graphene have unique morphology and excellent foreign body characteristics, which provide an important material basis for the realization of nano-spin electronic devices.


Because most two-dimensional materials are nonmagnetic, how to introduce magnetism into two-dimensional materials becomes the key to develop two-dimensional spintronic devices. The researchers at the University of Science and Technology of China proposed a new method of anion-doping with low halogen group to replace chalcogenide elements. On the basis of overcoming the difficulty of stripping due to the formation of intercalation compounds by cationic doping, the intrinsic spin and regulatory band structure were successfully introduced into two-dimensional nanomaterials to realize spin-dependent scattering electron transport. Based on this, a giant magnetoresistance device based on two-dimensional transition metal chalcogenide compounds was constructed, The experimental results achieved the highest negative magnetoresistance effect of two-dimensional nano-material system at present. The reviewer believes that this work has created a very meaningful research field and will have a positive impact on the future research and development of micro resistors.


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